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 2SC1623K
Elektronische Bauelemente 150 A, 60 V NPN Epitaxial Planar Transistor
RoHS Compliant Product A suffix of "-C" specifies halogen and lead free
DESCRIPTION
The 2SC1623K is designed for use in driver stage of AF amplifier and general purpose application.
PACKAGE DIMENSIONS
Base
3 Collector 1
SOT-23 Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600
2
Emitter
A L
3
H
K
2
J
J K
C
Top View
1
BS
L S V
V
G
D
H
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25C
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC Pc TJ, TSTG
Ratings
60 50 5 100 200 +150, -55 ~ +150
Unit
V V V mA mW
CHARACTERISTICS at Ta = 25C
Symbol
BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat)1 *hFE1 fT
Min.
60 50 5 90 -
Typ.
250
Max.
100 100 300 1.0 600 -
Unit
V V V nA nA mV V MHz IC=100uA IC=1mA IE=100uA VCB=60V VEB=5V
Test Conditions
IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=10mA * Pulse Test: Pulse Width380s, Duty Cycle2%
CLASSIFICATION OF hFE1
Rank Range Marking
P 90 - 180 L4 Y 135 - 270 L5 G 200 - 400 L6 B 300 - 600 L7
01-June-2002 Rev. A
Page 1 of 3
2SC1623K
Elektronische Bauelemente 150 A, 60 V NPN Epitaxial Planar Transistor
CHARACTERISTIC CURVES
01-June-2002 Rev. A
Page 2 of 3
2SC1623K
Elektronische Bauelemente 150 A, 60 V NPN Epitaxial Planar Transistor
01-June-2002 Rev. A
Page 3 of 3


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